STMicroelectronics STGP7H60DF IGBT 트랜지스터 트렌치 게이트 필드-스톱 IGBT, H 시리즈 600 V, 7 A 고속

Width: 10.4 mm

Height: 4.6 mm

Length: 15.85 mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 88 W

Operating Temperature Range: - 55 C to + 175 C

Continuous Collector Current: 14 A

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 14 A

Collector-Emitter Saturation Voltage: 1.95 V

Continuous Collector Current at 25 C: 14 A