STMicroelectronics STGSH50M120D IGBTs 트렌치 게이트 필드-스톱, 1200 V, 50 A, 저손실 M 시리즈 IGBT ACEPACK SMIT

Technology: Si

Unit Weight: 8.200 g

Configuration: Dual

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Pd - Power Dissipation: 536 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 240 A

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 69 A