STMicroelectronics STGSH80HB65DAG IGBT 트랜지스터 자동차용 ACEPACK SMIT 하프 브리지 650 V, 80 A HB 시리즈 IGBT 및 다이오드

Technology: Si

Unit Weight: 8.200 g

Configuration: Dual

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Pd - Power Dissipation: 250 W

Gate-Emitter Leakage Current: 800 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 83 A