STMicroelectronics STGYA120M65DF2 IGBT 트랜지스터 트렌치 게이트 필드-스톱 IGBT, M 시리즈 650 V, 120 A 저손실

Technology: Si

Unit Weight: 4.430 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 625 W

Gate-Emitter Leakage Current: +/- 250 uA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 160 A

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 160 A