Taiwan Semiconductor TSM085P03CV RGG MOSFETs -30, -64, 단일 P-채널

Fall Time: 27 ns

Rise Time: 2.6 ns

Technology: Si

Unit Weight: 304.151 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 55 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 50 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 7.2 ns

Typical Turn-Off Delay Time: 56 ns

Id - Continuous Drain Current: 64 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 38 S

Rds On - Drain-Source Resistance: 7.1 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V