Taiwan Semiconductor TSM150NB04DCR RLG MOSFETs 40V, 38A, 듀얼 N-채널 파워 MOSFET

Fall Time: 3 ns

Rise Time: 7 ns

Technology: Si

Unit Weight: 372.608 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 18 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 40 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 12 ns

Id - Continuous Drain Current: 38 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 32 S

Rds On - Drain-Source Resistance: 15 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 4 V