Texas Instruments ADS5545IRGZT DDR 12B 170 MSPS ADC 포함

Width: 7 mm

Height: 0.9 mm

Length: 7 mm

Features: High Performance

Shutdown: No Shutdown

Gain Error: 1 %/FSR

Input Type: Differential

Resolution: 14 bit

Output Type: CMOS/LVDS

Unit Weight: 138 mg

Architecture: Pipeline

Sampling Rate: 170 MS/s

Interface Type: Parallel, Serial

Mounting Style: SMD/SMT

Reference Type: External, Internal

Development Kit: ADS5545EVM

Power Consumption: 1.1 W

Reference Voltage: 2.5 V

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Number of Converters: 1 Converter

Supply Voltage - Max: 3.6 V

Supply Voltage - Min: 3 V

Analog Supply Voltage: 3.3 V

Digital Supply Voltage: 3.3 V

Pd - Power Dissipation: 1.1 W

Operating Supply Voltage: 3 V to 3.6 V

INL - Integral Nonlinearity: 3 LSB

SNR - Signal to Noise Ratio: 69 dB

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

DNL - Differential Nonlinearity: 0.5 LSB

ENOB - Effective Number of Bits: 11.8 bit

THD - Total Harmonic Distortion: 68 dBc

SFDR - Spurious Free Dynamic Range: 75 dBc

SINAD - Signal to Noise and Distortion Ratio: 67.5 dB