Texas Instruments CSD13302WT MOSFETs 12-V N 채널 NexF ET 파워 MOSFET sin A 595-CSD13302W

Width: 1 mm

Height: 0.62 mm

Length: 1 mm

Fall Time: 7 ns

Rise Time: 7 ns

Technology: Si

Unit Weight: 200 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 7.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.8 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 1.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10 S

Rds On - Drain-Source Resistance: 17.1 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 700 mV