Texas Instruments CSD17484F4 MOSFETs 30-V N 채널 NexF ET 파워 MOSFET si A 595-CSD17484F4T

Width: 0.6 mm

Height: 0.2 mm

Length: 1 mm

Fall Time: 4 ns

Rise Time: 1 ns

Technology: Si

Unit Weight: 0.400 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 920 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 3 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4 S

Rds On - Drain-Source Resistance: 128 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 650 mV