Texas Instruments CSD17577Q3A MOSFETs 30V N-채널 NexFE T 전력 MOSFET A 595-CSD17577Q3AT

Width: 3 mm

Height: 0.9 mm

Length: 3.15 mm

Fall Time: 4 ns

Rise Time: 31 ns

Technology: Si

Unit Weight: 27.700 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 27 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 53 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 83 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 76 S

Rds On - Drain-Source Resistance: 4.8 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V