Texas Instruments CSD19537Q3 MOSFETs 100-V N 채널 Nex FET 파워 MOSFET s A 595-CSD19537Q3T

Width: 3.3 mm

Height: 1 mm

Length: 3.3 mm

Fall Time: 3 ns

Rise Time: 3 ns

Technology: Si

Unit Weight: 24 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel Power MOSFET

Qg - Gate Charge: 16 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 83 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 10 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 14.5 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V