Texas Instruments CSD25304W1015 MOSFETs 20V P-채널 NexFET 전력 MOSFET A 595-CSD25304W1015T

Width: 1 mm

Height: 0.625 mm

Length: 1.5 mm

Fall Time: 10 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 1.400 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 4.4 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 750 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 24 ns

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 12 S

Rds On - Drain-Source Resistance: 92 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.15 V