Texas Instruments CSD87333Q3DT MOSFETs 하이 듀티 사이클 싱크 벅 넥스FET A 595-CSD87333Q3D

Width: 3.3 mm

Height: 1 mm

Length: 3.3 mm

Fall Time: 2.2 ns

Rise Time: 3.9 ns

Technology: Si

Unit Weight: 76 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 3.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 6 W

Typical Turn-On Delay Time: 2.1 ns

Typical Turn-Off Delay Time: 9.4 ns

Id - Continuous Drain Current: 15 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 43 S

Rds On - Drain-Source Resistance: 13.4 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 950 mV