Texas Instruments CSD87335Q3D MOSFETs 30-V N 채널 동기식 벅 NexFET A 595-CSD87335Q3DT

Width: 3.3 mm

Height: 1.5 mm

Length: 3.3 mm

Fall Time: 4 ns, 5 ns

Rise Time: 29 ns, 27 ns

Technology: Si

Unit Weight: 67.100 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 5.7 nC, 10.7 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 6 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Typical Turn-On Delay Time: 8 ns, 8 ns

Typical Turn-Off Delay Time: 13 ns, 17 ns

Id - Continuous Drain Current: 25 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 59 S, 107 S

Rds On - Drain-Source Resistance: 2.4 Ohms, 1.2 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V, 750 mV