Texas Instruments CSD87355Q5DT MOSFETs 30-V N 채널 동기식 벅 NexFET A 595-CSD87355Q5D

Width: 5 mm

Height: 1.5 mm

Length: 6 mm

Fall Time: 3 ns, 6 ns

Rise Time: 18 ns, 14 ns

Technology: Si

Unit Weight: 161.600 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 13.7 nC, 31.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 12 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Typical Turn-On Delay Time: 8 ns, 10 ns

Typical Turn-Off Delay Time: 13 ns, 27 ns

Id - Continuous Drain Current: 45 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 90 S , 151 S

Rds On - Drain-Source Resistance: 3.9 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.9 V