Texas Instruments CSD87502Q2 MOSFETs 30-V N 채널 NexF ET 전력 MOSFET du A 595-CSD87502Q2T

Width: 2 mm

Height: 0.75 mm

Length: 2 mm

Fall Time: 3 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 9.700 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 2.2 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3 ns

Typical Turn-Off Delay Time: 12 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 75 S

Rds On - Drain-Source Resistance: 35 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.6 V