Texas Instruments CSD88537NDT MOSFETs 60V 듀얼 N채널 NexFET 전력 MOSFET A 595-CSD88537ND

Width: 3.9 mm

Height: 1.75 mm

Length: 4.9 mm

Fall Time: 19 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 74 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Development Kit: DRV8308EVM, DRV8307EVM, BOOST-DRV8711

Transistor Type: 2 N-Channel

Qg - Gate Charge: 14 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 5 ns

Id - Continuous Drain Current: 16 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 42 S

Rds On - Drain-Source Resistance: 15 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V