Texas Instruments INA111BP 계측 증폭기 고속 FET 입력 계측 증폭기

Width: 6.35 mm

Height: 4.57 mm

Length: 9.81 mm

Gain V/V: 1 V/V to 1000 V/V

Gain Error: 0.005 %

Unit Weight: 528.600 mg

3 dB Bandwidth: 2 MHz

Amplifier Type: Instrumentation Amplifier

Mounting Style: Through Hole

SR - Slew Rate: 17 V/us

Number of Channels: 1 Channel

Dual Supply Voltage: +/- 15 V

Supply Voltage - Max: 36 V

Supply Voltage - Min: 12 V

Ib - Input Bias Current: 20 pA

Maximum Input Resistance: 10 TOhms

Operating Supply Current: 3.3 mA

Operating Supply Voltage: 12 V to 36 V

Vos - Input Offset Voltage: 500 uV

INL - Integral Nonlinearity: 0.005 %

GBP - Gain Bandwidth Product: 2 MHz

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

en - Input Voltage Noise Density: 10 nV/sqrt Hz

CMRR - Common Mode Rejection Ratio: 106 dB