Toshiba RN1107,LF(CT 디지털 트랜지스터 바이어스 저항 내장 트랜지스터

Unit Weight: 6 mg

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 100 mW

Typical Input Resistor: 10 kOhms

Typical Resistor Ratio: 0.213

Emitter- Base Voltage VEBO: 6 V

Continuous Collector Current: 100 mA

DC Collector/Base Gain hfe Min: 80

Collector- Emitter Voltage VCEO Max: 50 V