Toshiba RN1111MFV(TPL3) 디지털 트랜지스터 100mA 50볼트 3핀 10K옴

Width: 0.8 mm

Height: 0.5 mm

Length: 1.2 mm

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 120 @ 1mA @ 5V

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 700

Collector- Emitter Voltage VCEO Max: 50 V