Toshiba RN1119MFV,L3F 디지털 트랜지스터 바이어스 저항기 NPN .1A 50V 1k옴

Unit Weight: 1.500 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

Typical Input Resistor: 1 kOhms

Peak DC Collector Current: 100 mA

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 50 V