Toshiba RN1313,LF 디지털 트랜지스터 BRT 0.1A 50V

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

Typical Input Resistor: 47 kOhms

Peak DC Collector Current: 100 mA

Emitter- Base Voltage VEBO: 5 V

Maximum Operating Frequency: 250 MHz

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 125 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 50 V