Toshiba RN1314,LF 디지털 트랜지스터 BRT 0.1A 50V 1K옴 / 10K옴

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 100 mW

Typical Input Resistor: 1 kOhms

Typical Resistor Ratio: 0.1

Emitter- Base Voltage VEBO: 5 V

Maximum Operating Frequency: 250 MHz

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 50 V