Toshiba TK10A60D(STA4,Q,M) 파워 MOSFET

Type: Power MOSFET

Vgs(th): 4 V

Vgs (Max): 30V

Gate Charge (Qg): 25nC

Power consumption: 45W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 10A

Input Capacitance (Ciss): 1350pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 750mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V