Toshiba TK25N60X5,S1F MOSFETs 파워 MOSFET N-채널

Width: 5.02 mm

Height: 20.95 mm

Length: 15.94 mm

Fall Time: 4 ns

Rise Time: 40 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 60 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 180 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 80 ns

Typical Turn-Off Delay Time: 100 ns

Id - Continuous Drain Current: 25 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 120 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3 V