Toshiba TK5A55D(STA4,Q,M) MOSFETs N-채널 MOS 5A 550V 35W 540pF 1.7 옴

Width: 4.5 mm

Height: 15 mm

Length: 10 mm

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 35 W

Id - Continuous Drain Current: 5 A

Rds On - Drain-Source Resistance: 1.7 Ohms

Vds - Drain-Source Breakdown Voltage: 550 V