Toshiba TPC6010-H(TE85L,FM 파워 MOSFET

Type: Power MOSFET

Vgs(th): 2.3 V

Vgs (Max): 20V

Gate Charge (Qg): 12nC

Power consumption: 700mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 6.1A

Input Capacitance (Ciss): 830pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 59mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V