Vishay General Semiconductor IRFBF30PBF MOSFETs TO220 900V 3.6A N-CH MOSFET

Fall Time: 30 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 78 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 125 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 90 ns

Id - Continuous Drain Current: 3.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3.7 Ohms

Vds - Drain-Source Breakdown Voltage: 900 V

Vgs th - Gate-Source Threshold Voltage: 4 V