Vishay General Semiconductor IRFU9024PBF MOSFETs P-채널 60V 8.8 암페어

Width: 2.39 mm

Height: 6.22 mm

Length: 6.73 mm

Fall Time: 29 ns

Rise Time: 68 ns

Technology: Si

Unit Weight: 340 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 P-Channel

Qg - Gate Charge: 19 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 42 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 8.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.9 S

Rds On - Drain-Source Resistance: 280 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2 V