Vishay General Semiconductor SI1040X-T1-GE3 MOSFETs -8V Vds V Vgs SC89-6

Technology: Si

Unit Weight: 32 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 174 mW

Id - Continuous Drain Current: 430 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 625 mOhms

Vds - Drain-Source Breakdown Voltage: 8 V