Vishay General Semiconductor SQJ411EP-T1_GE3 MOSFETs -12V Vds -60A Id AEC-Q101 인증

Width: 5.13 mm

Height: 1.04 mm

Length: 6.15 mm

Fall Time: 75 ns

Rise Time: 36 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 150 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 68 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 32 ns

Typical Turn-Off Delay Time: 198 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 73 S

Rds On - Drain-Source Resistance: 4.8 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V