Vishay General Semiconductor SQJQ186ER-T1_GE3 MOSFET

Fall Time: 16 ns

Rise Time: 21 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 123 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 600 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 53 ns

Id - Continuous Drain Current: 329 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 100 S

Rds On - Drain-Source Resistance: 2.3 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V