Vishay General Semiconductor VS-ENK025C65S 프레스핏 파워 모듈 EMIPAK 650V 25A N-CH SIC

Fall Time: 7 ns

Rise Time: 9 ns

Technology: SiC

Configuration: 1-Phase Bridge

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Vf - Forward Voltage: 1.52 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 139 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 82 ns

Id - Continuous Drain Current: 29 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 80 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 2.9 V