Vishay General Semiconductor VS-GP300TD60S IGBT 트랜지스터 Ic 300A Vce(On)1.30V 하프 브리지 트렌치 P

Technology: Si

Unit Weight: 336.290 g

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.136 kW

Gate-Emitter Leakage Current: +/- 500 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 580 A

Collector-Emitter Saturation Voltage: 1.3 V

Continuous Collector Current at 25 C: 580 A