Vishay General Semiconductor VS-GT100TS065N IGBT 모듈 IGBT 모듈 - IAP IGBT

Technology: Si

Configuration: Half Bridge

Mounting Style: Screw Mount

Pd - Power Dissipation: 259 W

Gate-Emitter Leakage Current: 120 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector-Emitter Saturation Voltage: 650 V

Continuous Collector Current at 25 C: 96 A