Vishay General Semiconductor VS-GT300YH120N IGBT 모듈 출력 및 SW 모듈 - DIAP IGBT

Technology: Si

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.042 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 30 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.17 V

Continuous Collector Current at 25 C: 341 A