Vishay General Semiconductor VS-GT80DA120U IGBT 모듈 1200V, 80A Tch IGBT SOT-227 Bplr Tnstr
ModelVS-GT80DA120U
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Technology: Si
Configuration: Single
Mounting Style: Screw Mount
Pd - Power Dissipation: 658 W
Gate-Emitter Leakage Current: 220 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Continuous Collector Current at 25 C: 139 A
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