Vishay Siliconix SIHG33N65E-GE3 MOSFETs 650V Vds 30V Vgs TO-247AC

Fall Time: 71 ns

Rise Time: 56 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 114 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 313 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 32 ns

Typical Turn-Off Delay Time: 105 ns

Id - Continuous Drain Current: 31.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 95 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V