Vishay SI1072X-T1-GE3 MOSFET

Vgs(th): 3 V

Vgs (Max): 20V

Gate Charge (Qg): 8.3nC

Power consumption: 236mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Input Capacitance (Ciss): 280pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 93mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V