Vishay SI5475BDC-T1-E3 트랜스 MOSFET P-CH 12V 7.7A 8핀 칩 FET T/R

Type: Power MOSFET

Vgs(th): 1 V

Vgs (Max): 8V

Gate Charge (Qg): 40nC

Power consumption: 2.5|6.3W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 12V

Continuous drain current: 6A

Input Capacitance (Ciss): 1400pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 28mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V

Datasheet