Vishay SI6981DQ-T1-E3 MOSFET

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 830mW

Operating temperature: -55 to 150C

Drain to Source voltage: 20V

Continuous drain current: 4.1A

Current - Drain (Id) (25°C): 4.1A

Field-effect transistor type: 2P-Channel(Dual)

Gate Charge - (when applying Vgs): 25nC@4.5V

On Voltage - (Vgs when Id is applied): 900mV@300uA

On Resistance - (Rds when Id,Vgs is applied): 31mOhm@4.8A|4.5V