Vishay SIHK055N60EF-T1GE3 MOSFETs TOLL 600V 40A E 시리즈

Fall Time: 58 ns

Rise Time: 80 ns

Technology: Si

Qg - Gate Charge: 90 nC

Pd - Power Dissipation: 236 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 35 ns

Typical Turn-Off Delay Time: 56 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 50 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5 V