Vishay SQM120N04-1M4L_GE3 MOS 전력 트랜지스터 LV (=< 40V)

Channel Type: N Channel

Qualification: AEC-Q101

Power Dissipation: 375

Transistor Mounting: Surface Mount

Transistor Case Style: TO-263 (D2PAK)

Drain Source Voltage Vds: 40

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 120

Drain Source On State Resistance: 1.7

Gate Source Threshold Voltage Max: 3.5

Datasheet