WeEn Semiconductors BUJ302AX,127 BJTs - 바이폴라 트랜지스터 NPN 400 V 4 A

Technology: Si

Unit Weight: 2.089 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 26 W

DC Current Gain hFE Max: 100

Emitter- Base Voltage VEBO: 19 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 25

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 600 mV