WeEn Semiconductors BUJ303AX,127 BJTs - 바이폴라 트랜지스터 NPN 파워 트랜지스터

Technology: Si

Unit Weight: 2 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 32 W

DC Current Gain hFE Max: 35

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 500 V

Collector-Emitter Saturation Voltage: 350 mV