WeEn Semiconductors BUJD203AX,127 BJTs - 바이폴라 트랜지스터 NPN 425 V 4 A

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 26 W

DC Current Gain hFE Max: 32

Collector- Base Voltage VCBO: 850 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 425 V

Collector-Emitter Saturation Voltage: 290 mV