WeEn Semiconductors PHE13003C,412 BJTs - 바이폴라 트랜지스터 실리콘 확산 전력 트랜지스터

Technology: Si

Unit Weight: 217 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 2.1 W

DC Current Gain hFE Max: 25

Emitter- Base Voltage VEBO: 9 V

Collector- Base Voltage VCBO: 700 V

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 5

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 1.5 V