WeEn Semiconductors WNSC2M75120B76J SiC MOSFETS WNSC2M75120B7/TO263-7L/REEL 13" Q1/T1 *표준 마크 SMD

Technology: SiC

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 62 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 326 W

Vgs - Gate-Source Voltage: - 4 V, + 18 V

Id - Continuous Drain Current: 50.9 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 75 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V