Wolfspeed C3M0280090D 실리콘 카바이드 MOSFET G3 SiC MOSFET 900V, 280mOhm

Fall Time: 7.5 ns

Rise Time: 10 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 9.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 54 W

Vgs - Gate-Source Voltage: - 8 V, + 19 V

Typical Turn-On Delay Time: 26 ns

Typical Turn-Off Delay Time: 17.5 ns

Id - Continuous Drain Current: 11.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 280 mOhms

Vds - Drain-Source Breakdown Voltage: 900 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V