Wolfspeed CAB008A12GM3T 하프 브리지 SiC, 모듈, 8mohm, 1200V, 48 mm, AIN GM3, 하프 브리지, 산업용, 3세대, 사전 적용 TIM

Technology: SiC

Configuration: Dual

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 4 V, + 15 V

Id - Continuous Drain Current: 182 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 8 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.6 V